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车用SJ MOSFET

车用SJ MOSFET

SJ(超结)MOSFET采⽤基于电荷平衡的器件结构,导通电阻明显下降,在⾼压应⽤时优势尤其突出。常规VDMOS器件结构,RDs (ON )与BV是⽭盾的,当BV提高,EPI掺杂浓度减小时,导通电阻必然变⼤;而超级结是在提⾼NEPI掺杂浓度的同时,利⽤在NEPI中加⼊P柱,形成更⼤的PN结,在器件反偏时形成很厚的PN耗尽层,以达到⾼的隔离电压,从⽽使其RDs(oN)/BV打破原有VDMOS的极限。

Part Number VDS (V) ID (A) 25℃ PD(W) 25℃ RDS(ON)(mΩ)
(VGS=10V)(Max)
Qg(nC)(VGS=10V)
(Typ)
VGS(V) VGS(th)(V)
(Typ)
Package 是否符合车规要求
RMA65R280SN-AU 650 15 132 280 26 30 3.3 TO-252
RME65R280SN-AU 650 15 158 280 26 30 3.3 TO-263
RMA65R380SN-AU 650 11 118 380 19.2 30 3.3 TO-252
RMA65R650SN-AU 650 7 63 650 13.3 30 3.3 TO-252
RMF60R038SF-AU 600 70 694 38 191 30 4 TO-247
RMF60R074SF-AU 600 47 368 74 98 30 3.5 TO-247
RME60R099SF-AU 600 36 304.8 99 81 30 3.5 TO-263
RMF60R099SF-AU 600 36 304.8 99 81 30 3.5 TO-247
RMF60R190SF-AU 600 20 202 190 38.2 30 3.3 TO-247
RME60R190SF-AU 600 20 202 190 38.2 30 3.3 TO-263